Title :
5-wavelength surface emitting laser diode array based on post growth adjustment of surface mode emission
Author :
Golshani, A. ; Kellerman, P.O. ; Kock, Alexander ; Gornik, E. ; Korte, L.
Author_Institution :
Inst. of Solid State Phys., Wien Univ. of Tech., Austria
Abstract :
The multi-wavelength optical networking (MONET) is the ultimate solution for future optical communication systems serving both commercial and specialized communication applications. Wavelength division multiplexing (WDM) schemes have been developed to fully utilize the bandwidth of optical fibers. Multi-wavelength semiconductor laser diode (LD) arrays are considered as a compact choice for WDM sources due to their capability of simultaneous transmission of several channels into an optical fiber from a single structure. This increases the total system speed and resolution without significantly increasing system size or costs. Efforts on LD arrays for WDM applications focus on LDs such as DFB/DBR and VCSEL lasers.
Keywords :
distributed Bragg reflector lasers; distributed feedback lasers; epitaxial growth; laser cavity resonators; laser modes; optical fibre networks; optical transmitters; semiconductor growth; semiconductor laser arrays; semiconductor lasers; surface emitting lasers; wavelength division multiplexing; 5-wavelength surface emitting laser diode array; DBR lasers; DFB lasers; MONET; VCSEL lasers; WDM; WDM applications; costs; multi-wavelength optical networking; multi-wavelength semiconductor laser diode arrays; optical communication systems; optical fiber bandwidth; post growth adjustment; surface mode emission; system size; total system speed; wavelength division multiplexing; Diode lasers; Optical arrays; Optical fiber communication; Optical fiber networks; Optical fibers; Optical surface waves; Semiconductor laser arrays; Stimulated emission; Surface emitting lasers; Wavelength division multiplexing;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619177
