Title :
1.7kV NPT V-groove clustered IGBT: fabrication and experimental demonstration
Author :
Spulbe, O. ; Sweet, M. ; Vershinin, K. ; Luther-King, N. ; Sankara-Narayanan, E.M. ; De Souza, M.M. ; Flores, D. ; Millan, J.
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Abstract :
Novel 1.7kV NPT V-groove Trench CIGBT structures have been fabricated using an inexpensive wet etch technology for the trench gates. This approach can significantly reduce the costs inherent in the case of a conventional RIE. Experimental results show current saturation and short-circuit capability. Moreover, the V-groove CIGBT can be switched off without any additional circuit.
Keywords :
etching; insulated gate bipolar transistors; 1.7 kV; NPT IGBT; V-groove clustered IGB; cost reduction; current saturation; experimental demonstration; fabrication; short-circuit capability; trench gates; wet etch technology; Anodes; Cathodes; Costs; Electrons; Fabrication; Insulated gate bipolar transistors; Protection; Thyristors; Voltage; Wet etching;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225298
