Title :
New trench MOSFET technology for DC-DC converter applications
Author :
Ma, Ling ; Amali, Adam ; Kiyawat, Siddharth ; Mirchandani, Ashita ; He, Donald ; Thapar, Naresh ; Sodhi, Ritu ; Spring, Kyle ; Kinzer, Dan
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
ew trench MOSFET technology presented in this paper includes several major technological breakthroughs that significantly improved device performance in DC-DC converter applications. The figure of merit R*AA has reached as low as 12 mOhm.mm2 for a 30 VN SyncFET and R*Qg is only 75 is only 75 mOhm.nC for a 30VN Control FET, one of the lowest reported.
Keywords :
DC-DC power convertors; power MOSFET; semiconductor technology; DC-DC converter applications; New trench MOSFET technology; improved device performance; major technological breakthroughs; DC-DC power converters; Energy management; MOSFET circuits; Manufacturing; Power MOSFET; Power system management; Rectifiers; Silicon; Sputter etching; Topology;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225300
