Title :
Lattice Wigner simulations of quantum devices
Author :
Miller, D.R. ; Neikirk, D.P.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Current quantum kinetic Wigner formalisms are single valley models which solve for the distribution function parallel to the applied electric field. However, we find that the quantum distribution function in the transverse momentum direction is also very important in getting the device characteristics correctly. This is demonstrated using a non-parabolic, multiple valley Lattice Wigner function model. The results even apply to the very simple case of homogeneous semiconductor material under a uniform electric field.<>
Keywords :
quantum interference devices; semiconductor device models; simulation; tunnelling; Lattice Wigner simulations; homogeneous semiconductor material; multiple valley lattice Wigner function model; nonparabolic model; quantum devices; uniform electric field; Quantum effect semiconductor devices; Semiconductor device modeling; Simulation; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307424
