Title :
High gain monolithic 4H-SiC Darlington transistors
Author :
Tang, Yi ; Chow, T. Paul
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
An epi-base, implanted-emitter monolithic 4H-SiC Darlington transistor which shows a peak common emitter current gain of ∼ 450 is reported. The forward drop at 50A/cm2 is around 7V. The inter-stage isolation is achieved with trenches filled with oxide. Isolation trench deeper than the base-collector junction is needed to effectively isolate the two BJT stages.
Keywords :
bipolar transistors; isolation technology; monolithic integrated circuits; silicon compounds; wide band gap semiconductors; Darlington transistors; epi-base 4H-SiC transistor; high gain 4H-SiC transistors; implanted-emitter 4H-Sic transistor; inter-stage isolation; monolithic 4H-SiC transistors; oxide filled trenches; trench isolation; Annealing; Bipolar transistors; Doping; Etching; Fabrication; Implants; Semiconductor optical amplifiers; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225307
