Title :
Numerical and experimental results correlation during power MOSFET ageing
Author :
Azoui, T. ; Tounsi, P. ; Dupuy, Ph ; Dorkel, J.M. ; Martineau, D.
Author_Institution :
LAAS, Toulouse, France
Abstract :
This paper presents a methodology, based on 3D electro-thermal simulation, to investigate failures of vertical power MOSFET due to metallization aging of source terminal. The numerical results were correlated with experiment based on past study.
Keywords :
ageing; power MOSFET; semiconductor device metallisation; 3D electro-thermal simulation; metallization aging; power MOSFET ageing; source terminal; vertical power MOSFET; Aging; Conductivity; Degradation; Electrical resistance measurement; Logic gates; Resistance;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on
Conference_Location :
Cascais
Print_ISBN :
978-1-4673-1512-8
DOI :
10.1109/ESimE.2012.6191798
