Title :
Emission of electrons from a patterned negative electron affinity cathode
Author :
Santos, E.J.P. ; MacDonald, N.C.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
We have developed a microelectronics process to achieve the negative electron affinity (NEA) effect on the exposed areas of a patterned p/sup ++/-GaAs chip. The process was also extended to fabricate multielectrode NEA cathodes. The ability to selectively emit electrons from small areas can have applications in NEA-based vacuum microelectronic devices, projection e-beam lithography tools, and combinations of bulk devices with vacuum electronic emitters. Such instruments can take advantage of the cold operation, monochromaticity and high brightness of NEA cathodes.<>
Keywords :
cathodes; electron affinity; electron field emission; gallium arsenide; semiconductor technology; sputtering; vacuum microelectronics; GaAs; NEA cathode fabrication; microelectronics process; multielectrode NEA cathodes; negative electron affinity effect; patterned negative electron affinity cathode; patterned p/sup ++/-GaAs chip; projection e-beam lithography tools; vacuum electronic emitters; vacuum microelectronic devices; Cathodes; Electron emission; Gallium compounds; Semiconductor device fabrication; Sputtering; Vacuum microelectronics;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307465