Title :
A margin-free contact process using an Al/sub 2/O/sub 3/ etch-stop layer for high density devices
Author :
Fukase, T. ; Hada, H. ; Aoki, H. ; Kunio, T.
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Japan
Abstract :
A margin-free contact process is proposed using Al/sub 2/O/sub 3/ as an etch-stop layer to protect the underlying wirings during contact-hole etching and to isolate them from the contact-hole plug conductor. The performance of Al/sub 2/O/sub 3/ as an etch-stop layer has been evaluated and the feasibility of the margin-free contact process has been verified by a contact test structure using a 0.25 mu m design rule.<>
Keywords :
VLSI; etching; integrated circuit technology; metallisation; 0.25 micron; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ etch-stop layer; IC fabrication; ULSI devices; contact-hole etching; contact-hole plug conductor; high density devices; margin-free contact process; Etching; Integrated circuit fabrication; Metallization; Very-large-scale integration;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307487
