Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors

Author

Zanoni, Enrico ; Crabbe ; Stork, J.M.C. ; Pavan, P. ; Verzellesi, G. ; Vendrame, L. ; Canali, Carlo

Author_Institution

Dipartimento di Elettronica e Inf., Padova Univ., Italy

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

927

Lastpage

930

Abstract

A complete analytical model for impact ionization effects in bipolar transistors, which is able to predict the behaviour of advanced devices up to breakdown, is presented. A simple expression of the carrier mean energy suitable for circuit simulation is used to calculate the device multiplication coefficient and enables the influence of non-equilibrium transport on impact ionization to be accounted for. The role played by the reverse base current in determining the snap-back of the common base output characteristics is investigated both experimentally and theoretically.<>

Keywords

bipolar transistors; elemental semiconductors; impact ionisation; semiconductor device models; silicon; simulation; Si; Si bipolar transistors; advanced devices; analytical model; avalanche breakdown; carrier mean energy; common base output characteristics; device multiplication coefficient; impact ionization effects; nonequilibrium transport; reverse base current; simulation; snap-back determination; Bipolar transistors; Impact ionization; Semiconductor device modeling; Silicon; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307508

Filename

307508