Title :
dv/dt induced latching failure in 1200 V/400 A halfbridge IGBT modules
Author :
Wu, Wuchen ; Held, Marcel ; Umbricht, Niklaus ; Birolini, Alessandro
Author_Institution :
Reliability Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
A reliability investigation of 1200 V/400 A halfbridge IGBT modules by switching test is reported in this paper. Latch up failure was observed in the un-tested part of IGBT modules, which resulted in catastrophic craterlike melting pits in emitter bonding pads and then the tested part of IGBT modules was destroyed by very high power dissipation. Fast turn on due to a small gate resistance caused a high dv/dt (about 4000 Vspl mu/s) which triggered the latching failure.<>
Keywords :
bridge circuits; circuit reliability; insulated gate bipolar transistors; modules; power electronics; semiconductor switches; 1200 V; 400 A; catastrophic craterlike melting pits; dv/dt induced latching failure; emitter bonding pads; gate resistance; halfbridge IGBT modules; reliability; switching test; turn on; very high power dissipation; Bonding; Capacitors; Circuit testing; Diodes; Inductance; Insulated gate bipolar transistors; Latches; Power semiconductor switches; Semiconductor device reliability; Thyristors;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307804
