Title :
Carrier lifetime extraction in fully-depleted SOI devices
Author :
Ernst, T. ; Cristoloveanu, S. ; Vandooren, A. ; Colinge, J.-P. ; Rudenko, T.E.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
A special current peak in P/sup +/P/sup -/N/sup +/ dual-gate diodes is observed, simulated and analytically modeled. A new simple experimental method to characterize the recombination mechanism and lifetime in fully depleted diodes is proposed, by considering that recombination occurs in the whole body of the device. The new method allows for quick characterization of carrier lifetime, which is a relevant parameter for SOI wafer quality.
Keywords :
carrier lifetime; electron-hole recombination; quality control; semiconductor device models; semiconductor device testing; semiconductor diodes; silicon-on-insulator; SOI wafer quality; Si-SiO/sub 2/; analytical model; carrier lifetime; carrier lifetime extraction; current peak; device body recombination; dual-gate diodes; fully depleted diodes; fully-depleted SOI devices; recombination mechanism; Charge carrier lifetime; Diodes; Doping; Electric potential; Electrons; Linear predictive coding; Pulse measurements; Semiconductor films; Silicon; Voltage;
Conference_Titel :
SOI Conference, 1998. Proceedings., 1998 IEEE International
Conference_Location :
Stuart, FL, USA
Print_ISBN :
0-7803-4500-2
DOI :
10.1109/SOI.1998.723083
