Title :
Electromigration after stress-induced migration test in quarter-micron Al interconnects
Author :
Hoshino, K. ; Koyama, Koichi ; Sugano, Y.
Author_Institution :
ULSI Process Dev. Center, Sony Corp., Kanagawa, Japan
Abstract :
A sequential test of stress-induced migration and electromigration was employed to evaluate Al interconnect reliability. We investigated electromigration after storage testing for stress-induced failure and found a deterioration in electromigration lifetime of quarter-micron Al interconnects caused by slit-like voids generated during the storage test.<>
Keywords :
aluminium; circuit reliability; electromigration; failure analysis; integrated circuit testing; metallisation; voids (solid); Al; IC metallisation; electromigration lifetime; interconnect reliability; quarter-micron Al interconnects; sequential test; slit-like voids; storage testing; stress-induced failure; stress-induced migration test; submicron interconnect; Artificial intelligence; Circuit testing; Current density; Electromigration; Integrated circuit interconnections; Scanning electron microscopy; Shape; Sputtering; Surface resistance; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307828
