Title :
A novel method for the manufacture of MEMS devices with large exposed area based on SOI wafers
Author :
Xie, Jianbing ; Yuan, Weizheng ; Chang, Honglong
Author_Institution :
Micro & Nano Electromech. Syst. Lab., Northwestern Polytech. Univ., Xi´´an
Abstract :
This paper describes a novel method of producing released MEMS devices with large exposed area based on SOI wafers. First, we discussed when the notching effect happens, from our experiments, for 30 mum SOI wafer, the gap between lines should be below 14 mum to initiate notching. Then, the release structure for the large exposed area device is designed, which opens up opportunities for the design of devices with large movement capabilities. A silicon temperature sensor with large exposed area is used to demonstrate the proposed method. Observations of the release structure at various stages of removal confirm our method; the device has been released use the one-step process and the large exposed area cleared without dasiagrasspsila effect.
Keywords :
microsensors; silicon-on-insulator; temperature sensors; MEMS devices; SOI wafers; notching effect happens; silicon temperature sensor; Electromechanical systems; Electrons; Hafnium; Manufacturing; Microelectromechanical devices; Plasma applications; Plasma devices; Silicon on insulator technology; Systems engineering and theory; Wet etching;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
DOI :
10.1109/NEMS.2009.5068571