Title :
Stress-induced low-level leakage mechanism in ultrathin silicon dioxide films caused by neutral oxide trap generation
Author :
Kimura, Mikihiro ; Koyama, Hiroshi
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Stress-induced low-level leakage current in ultrathin silicon dioxide films is correlated with neutral oxide trap generation based on first-order kinetics. The conduction mechanism is explained by Fowler-Nordheim tunneling from the leakage spot, generated at the cathode interface, to the neutral oxide trap level, lower in energy than the SiO/sub 2/ barrier height.<>
Keywords :
dielectric thin films; electron traps; hole traps; leakage currents; metal-insulator-semiconductor structures; reaction kinetics; reliability; silicon compounds; tunnelling; Fowler-Nordheim tunneling; MOS structures; Si-SiO/sub 2/; SiO/sub 2/; SiO/sub 2/ barrier height; cathode interface; conduction mechanism; first-order kinetics; leakage spot; neutral oxide trap generation; neutral oxide trap level; stress-induced low-level leakage current; stress-induced low-level leakage mechanism; ultrathin silicon dioxide films; Dielectric measurements; Electron traps; Interface states; Leakage current; Semiconductor films; Silicon compounds; Stress measurement; Tunneling; Ultra large scale integration; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307841
