Solution growth of HgTe Nanoweires at lowtemperature

Author

Qin, Aimiao ; Liu, Yuzi ; Wang, Zhong Lin

Author_Institution

Dept. of Mater. & Chem. Eng., Guilin Univ. of Technol., Guilin

fYear

2009

fDate

5-8 Jan. 2009

Firstpage

409

Lastpage

412

Abstract

Large scale HgTe nanowires have been grown from Te nanowires by solution approach at low temperature. The widths are in the range 10-20 nm, with lengths up to 1mum. The nanowires have been characterized by uv - vis spectra, scanning electron microscopy, energy-disperse X-ray spectroscopy (EDS), transmission electron microscopy. The effects of growth temperature and time have been investigated and the best growth temperature is 80-90degC. The electric properties of HgTe nanowires thin film fabricated on glass substrates were investigated and showed Ohm contact.

Keywords

X-ray chemical analysis; mercury alloys; metallic thin films; nanotechnology; nanowires; ohmic contacts; scanning electron microscopy; tellurium alloys; transmission electron microscopy; ultraviolet spectra; visible spectra; HgTe; Ohm contact; UV-vis spectra; energy-disperse X-ray spectroscopy; nanowires; scanning electron microscopy; size 10 nm to 20 nm; solution growth; temperature 80 degC to 90 degC; transmission electron microscopy; Glass; Large-scale systems; Nanowires; Scanning electron microscopy; Spectroscopy; Substrates; Tellurium; Temperature; Transistors; Transmission electron microscopy; HgTe nanowires; Ohm contact; solution;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4244-4629-2

Electronic_ISBN

978-1-4244-4630-8

Type

conf

DOI

10.1109/NEMS.2009.5068606

Filename

5068606