Title :
Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology
Author :
Rosales, Marc D. ; Polleux, Jean-Luc ; Algani, Catherine
Author_Institution :
ESIEE Paris, Univ. Paris-Est, Paris, France
Abstract :
We present the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process. It is shown that 50μm HPTs are exhibits highest gain.bandwidth product of 0.8GHz.A/W compared to the 10μm HPTs.
Keywords :
Ge-Si alloys; bipolar transistor circuits; phototransistors; HPT; SiGe; bipolar process technology; frequency 80 GHz; heterojunction phototransistors; size 50 mum; Fiber optics; Frequency measurement; Gain; Gain measurement; Integrated optics; Optical device fabrication; Silicon germanium;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053777
