Ultra low power active-RC filter in 180 nm CMOS technology

Author

Rekha, S. ; Laxminidhi, T.

Author_Institution

Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol. Karnataka, Surathkal, India

fYear

2013

fDate

24-26 June 2013

Firstpage

1

Lastpage

5

Abstract

This paper presents the design of a low voltage, ultra low power fifth order Chebyshev low pass filter operating at a power supply voltage of 0.5 V in 180 nm CMOS technology. A CMOS inverter based transconductor is used as the building block. A sub-threshold model is developed for the transconductor as the transistors are operating in sub-threshold region. A feedforward compensated OTA is designed using this transconductor and is used to realize the filter. Designed filter has a cutoff frequency of 150 kHz and offers a dynamic range of 54.16 dB with a figure of merit of 0.02 fJ. Power consumed by the filter is 21.79 microwatt.

Keywords

CMOS analogue integrated circuits; Chebyshev filters; RC circuits; active filters; low-power electronics; operational amplifiers; CMOS inverter based transconductor; feedforward compensated OTA; frequency 150 kHz; low voltage fifth order Chebyshev low pass filter; power 21.79 muW; size 180 nm; transconductor; ultra low power active-RC filter; voltage 0.5 V; Bandwidth; CMOS integrated circuits; Chebyshev approximation; Gain; Inverters; Noise; Resistance; Active-RC filter; Feed-forward compensation; Negative resistance; Transconductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Control, Measurement, Signals and their application to Mechatronics (ECMSM), 2013 IEEE 11th International Workshop of

Conference_Location

Toulouse

Type

conf

DOI

10.1109/ECMSM.2013.6648930

Filename

6648930