DocumentCode
1958748
Title
UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation
Author
Zhao, Hongwei ; Hu, Weixuan ; Xue, Chunlai ; Cheng, Buwen ; Wang, Qiming
Author_Institution
State Key Lab. of Integrated Optoelectron., Beijing, China
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
311
Lastpage
313
Abstract
Ge/SiGe multiple quantum wells (MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition (UHVCVD) technique. The quantum-confined Stark effect (QCSE) is clearly observed in our MQWs structure.
Keywords
Ge-Si alloys; chemical vapour deposition; electroabsorption; elemental semiconductors; germanium; quantum confined Stark effect; semiconductor growth; semiconductor quantum wells; silicon; substrates; Ge-SiGe; UHVCVD growth; electro-absorption modulation; multiple quantum wells; quantum-confined Stark effect; silicon substrates; ultra high vacuum chemical vapor deposition technique; Artificial intelligence; Optical imaging; Photonics; Quantum well devices; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053800
Filename
6053800
Link To Document