DocumentCode :
1958893
Title :
Finite elements study of high mechanical stress in nanostructures for innovative NEMS sensors
Author :
Xu, Xin ; Bercu, B. ; Lime, François ; Montes, Laurent
Author_Institution :
IMEP-LAHC, Grenoble Inst. of Technol., Grenoble
fYear :
2009
fDate :
5-8 Jan. 2009
Firstpage :
676
Lastpage :
681
Abstract :
Mechanical stress is increasingly applied in micro-electronics. For instance, strained silicon technology is widely used to improve carrier mobility and therefore driver current for advanced MOS transistors. For micro-electromechanical systems, piezoresistive effects are universally employed in pressure sensors. In this paper we present an original method for studying mechanical stress in nano-devices placed on ultra-thin membranes, which has several advantages compared with the conventional four-point-bending method. Using this new architecture, we investigate the innovative NEMS pressure sensor properties in static and dynamic modes. We study the optimal orientation and position of a nanowire on the membrane. We show that a large improvement in pressure measurement sensitivity can be obtained by adopting tunnel junction technology. We also investigate the dynamic multi-bends of the nanostructure in its dynamic deformation modes and calculate the tunnel current which passes through the multi tunnel junctions by the transport matrix method. Finally, our work helps to understand the electrical and mechanical properties of the nanostructure under the influence of large mechanical stress and to design innovative NEMS pressure sensors.
Keywords :
deformation; finite element analysis; micromechanical devices; nanosensors; piezoresistive devices; pressure measurement; pressure sensors; MOS transistors; carrier mobility; deformation; finite elements; four-point-bending method; innovative NEMS sensors; mechanical stress; microelectronics; nanostructures; piezoresistive effects; pressure sensors; strained silicon; tunnel current; Biomembranes; Driver circuits; Finite element methods; MOSFETs; Mechanical sensors; Microelectromechanical systems; Nanoelectromechanical systems; Nanostructures; Silicon; Stress; Finite element method; NEMS; mechanical stress/strain; nanowire; pressure sensor; tunnel junction; ultra-thin membrane;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
Type :
conf
DOI :
10.1109/NEMS.2009.5068670
Filename :
5068670
Link To Document :
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