InGaAs and GaAs/InGaAs Channel Enhancement Mode n-MOSFETs With HfO2 Gate Oxide and a-Si Interface Passivation Layer

We demonstrate for the first time self-aligned, gate-first, enhancement mode n-MOSFETs with InGaAs and GaAs/InGaAs channels, Atomic Layer Deposition HfO₂ gate oxide and TaN gate. Good control of the drain current was achieved due to effective passivation of the III-V-high-k interface with ultra-thin MBE in-situ grown a-Si layer. High transconductance and electron channel mobility along with negligible shift of the threshold voltage and small gate bias hysteresis of the drain current are demonstrated.