Title :
Nanolasers directly grown on Si
Author :
Chang-Hasnain, Connie J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
We report a completely new growth mode with which single crystalline InGaAs/GaAs nanopillars can be grown directly on silicon substrates at CMOS compatible temperature. Light emitting diodes, photovoltaic device and optically pumped lasers are achieved.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; nanofabrication; nanophotonics; nanostructured materials; optical pumping; semiconductor growth; semiconductor lasers; CMOS compatible temperature; InGaAs-GaAs; Si; growth mode; light emitting diodes; nanolasers; optically pumped lasers; photovoltaic device; silicon substrates; single crystalline nanopillars; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical films; Optical pumping; Silicon; Substrates;
Conference_Titel :
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
Conference_Location :
Los Angeles, CA
Print_ISBN :
978-1-4673-0262-3
