• DocumentCode
    1959977
  • Title

    Fabrication of a novel micro liquid flow sensor using a TaN thin film

  • Author

    Chung, C.K. ; Chen, T.C. ; Shih, T.R. ; Chang, W.T.

  • Author_Institution
    Dep´´t of Mech. Eng., Nat. Cheng Kung Univ., Tainan
  • fYear
    2009
  • fDate
    5-8 Jan. 2009
  • Firstpage
    885
  • Lastpage
    888
  • Abstract
    A micro flow sensor with high temperature coefficient of resistance (TCR) is very important because of its high sensitivity of flow sensors. Different from the conventional positive-TCR Pt film used in micro flow sensor with self-heating, higher negative-TCR micro flow sensor without self-heating is developed and fabricated in this research. The novel TaN-material micro liquid flow sensors are fabricated by reactive magnetron co-sputtering system at different nitrogen flow ratios. The magnitude of negative-TCR TaN films increases with increasing nitrogen flow ratios, so the high-TCR micro flow sensor can be prepared successfully at higher N2 flow ratio. In order to understand the sensing ability, micro flow sensor is fabricated by MEMS technology. Measurement results show that this TaN micro flow sensor has high sensitivity of 407 ohm/(ml/min) at Re < 5, corresponding to volume flow rate of 0.167 ml/min. This device with high-negative-TCR materials can be beneficial for the measurement of low-velocity flow of liquid because of its high sensitivity at low Reynolds number.
  • Keywords
    flow sensors; microsensors; sputtering; tantalum compounds; thin film sensors; thin films; MEMS technology; TaN; micro liquid flow sensor; reactive magnetron co-sputtering system; temperature coefficient of resistance; Fabrication; Fluid flow; Fluid flow measurement; Magnetic sensors; Micromechanical devices; Nitrogen; Sensor systems; Temperature sensors; Thin film sensors; Volume measurement; laser; micromixer; mixing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4244-4629-2
  • Electronic_ISBN
    978-1-4244-4630-8
  • Type

    conf

  • DOI
    10.1109/NEMS.2009.5068716
  • Filename
    5068716