Simulation of Spin Torque Devices with Inelastic Spin flip Scattering

In this paper we present simulation results for spin torque devices. Our simulation is based on self consistent solution of non-equilibrium Green´s function (NEGF) method, which is used to describe the transport mechanism, and Landau-Lifshitz-Gilbert (LLG) equation, which accounts for the magnetization dynamics. In addition to purely barrier dependent reflection/transmission, which is normally considered to be the sole contributor to spin torque, we also study the effects of spin flip scattering. From this, we show here, for the first time, that the presence of spin flip scattering may explain experimentally observed values for both (i) tunneling magneto resistance (TMR) and (ii) critical current at the same time, which, otherwise, cannot be explained in a coherent manner.