Quantum Capacitance Measurement for SWNT FET with Thin ALD High-k Dielectric

The thin conformal HfO₂ dielectric, which could provide very large geometric top-gate-capacitance C_gg comparable to SWNT quantum capacitance C_q, and the capacitance measurement technique developed by us, which could reduce the background capacitance down to C₀ ~30aF, are two key promising factors for us to study the quantum capacitance of the SWNT FET. We successfully got the pronounced oscillating peaks in the C_q vs. top-gate V_TG, which will be very usefully for us to better characterize the performance of the SWNT FETs and to further study the low-dimensional electronic structure.