DocumentCode :
1960263
Title :
Role of Electrical and Thermal Contact Resistance in the High-Bias Joule Breakdown of Single-Wall Carbon Nanotube Devices
Author :
Pop, Eric
Author_Institution :
Univ. of Illinois at Urbana-Champaign, Urbana
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
273
Lastpage :
274
Abstract :
Several data sets of electrical breakdown in air of single-wall carbon nanotubes (SWNTs) on insulating substrates are collected and analyzed. These are data taken in different labs across the world on a wide range of SWNTs, spanning lengths 10 nm-8 mum, diameters 0.8 -3.2 nm and electrical contact resistance between 9-830 kOmega. A universal scaling of the Joule breakdown power with nanotube length is found, essentially independent of the insulating substrates used (here, SiO2, Si3N4, Al2O3). The electrical and thermal resistance at the nanotube-electrode contacts regulate the breakdown behavior for short (L < 0.6 mum) SWNTs, whereas the breakdown power scales linearly with length for longer tubes.
Keywords :
carbon nanotubes; contact resistance; nanotube devices; semiconductor device breakdown; electrical breakdown; electrical contact resistance; high-bias Joule breakdown; insulating substrates; nanotube length; nanotube-electrode contacts; single-wall carbon nanotube devices; thermal contact resistance; Aggregates; Carbon nanotubes; Contact resistance; Electric breakdown; Electric resistance; Insulation; Temperature; Thermal conductivity; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373751
Filename :
4373751
Link To Document :
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