Contact resistance in Polytriarylamine based organic transistors

The paper aims to describe the simulations and measurements performed in order to determine the resistance of source and drain contacts of organic transistors with Polytriarylamine (PTAA) semiconductor. PSpice and MATLAB comparative simulations based on the analytic model are performed. The DC Sweep and parametric simulations are employed to find the electrical characteristics of the transistors, in order obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This technique uses transistor-like structures of various channel lengths, as these have a layout suitable for extracting and assessing the contact resistance. The TLM structures considered are bottom contact bottom gate transistors with interdigitated electrodes of various channel lengths, their geometry assumed to ensure similar values for the drain and source resistances due to the symmetry. This paper approaches the aspects related to the electrical simulation of basic transistor models in comparison to the measurements.