DocumentCode :
1960952
Title :
Ultrafast energy relaxation and trapping dynamics in semiconductor quantum dots
Author :
Klimov, V. ; McBranch, D. ; Schwarz, C. ; White, C.W.
Author_Institution :
Chem. Sci. & Technol. Div., Los Alamos Nat. Lab., NM, USA
fYear :
1998
fDate :
8-8 May 1998
Firstpage :
165
Abstract :
Summary form only given. We report femtosecond (fs) studies of energy relaxation and trapping dynamics in three types of quantum-dot systems: semiconductor nanocrystals (NC)/glass composites made by high temperature precipitation, ion-implanted NCs, and colloidal NCs generated via organometallic routes. Comparison of ultrafast data for these three types of samples allows us to separate effects intrinsic to quantum dots from those related to lattice imperfections and interface properties. High-sensitivity fs chirp-free transient absorption (TA) is applied to directly measure the population/depopulation dynamics.
Keywords :
colloids; high-speed optical techniques; interface phenomena; ion implantation; semiconductor quantum dots; sensitivity; colloidal NCs; depopulation dynamics; energy relaxation; femtosecond studies; high temperature precipitation; high-sensitivity fs chirp-free transient absorption; interface properties; ion-implanted NCs; lattice imperfections; organometallic routes; population dynamics; quantum-dot systems; semiconductor nanocrystal/glass composites; semiconductor quantum dots; trapping dynamics; ultrafast data; ultrafast energy relaxation; Charge carrier processes; Chemical technology; Chirp; Electron traps; Glass; Phonons; Quantum dots; Solid state circuits; US Department of Transportation; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
Type :
conf
DOI :
10.1109/IQEC.1998.680339
Filename :
680339
Link To Document :
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