The Development of Gallium Arsenide Schottky Barrier Diodes as Mixers and Detectors

Author

Oxley, T.H. ; Summers, J. ; Hansom, A.

Author_Institution

General Electric Co.Ltd., Semiconductor Laboratories, Hirst Research Centre, Wembley, England.

fYear

1969

fDate

8-12 Sept. 1969

Firstpage

483

Lastpage

486

Keywords

Detectors; Encapsulation; Fabrication; Gallium arsenide; Impedance; Noise figure; Plastics; Schottky barriers; Schottky diodes; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1969. 1st European

Conference_Location

London, UK

Type

DOI

10.1109/EUMA.1969.331951

Filename

4130620

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