Title :
Enhanced hot-carrier induced degradation in pMOSFETs stressed under high gate voltage
Author :
Chen, Jone F. ; Tsao, Chih-Pin ; Ong, T.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
30 June-2 July 2003
Abstract :
Enhanced hot-carrier induced drain current degradation under high gate voltage stress is observed in pMOSFETs. Electron tunneling from the gate plus Auger recombination assisted hot-hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide, or devices operated under higher temperature or lower drain voltage.
Keywords :
Auger effect; MOSFET; hot carriers; stress effects; tunnelling; electron tunneling; gate oxide; gate plus Auger recombination; high gate voltage stress; hot-carrier induced drain current degradation; hot-hole energy gain; lower drain voltage; pMOSFET; CMOS technology; Degradation; Electrons; Hot carriers; MOSFETs; Spontaneous emission; Stress; Temperature; Tunneling; Voltage;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225732
