DocumentCode
1962585
Title
Atomic structure of self-organized QDs
Author
Jacobi, Karl
Author_Institution
Fritz-Haber-Inst. of the Max-Planck-Soc., Berlin, Germany
Volume
2
fYear
2001
fDate
2001
Firstpage
399
Abstract
We determined the exact shape of self-assembled InAs QDs from atomically resolved structures on their bounding facets. Four facets dominate the shape of the QDs, whose Miller indices were identified with the help of studies on high-index GaAs surfaces to be {137}
Keywords
III-V semiconductors; indium compounds; reflection high energy electron diffraction; scanning tunnelling microscopy; self-assembly; semiconductor quantum dots; surface structure; GaAs; InAs; Miller indices; RHEED; atomic structure; atomically resolved structures; bounding facets; high-index surfaces; quantum dot shape; self-assembled QD; self-organized QD; top view STM; Gallium arsenide; Jacobian matrices; Laser applications; Quantum dot lasers; Scanning electron microscopy; Semiconductor nanostructures; Shape; Temperature; Transmission electron microscopy; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location
San Diego, CA
ISSN
1092-8081
Print_ISBN
0-7803-7105-4
Type
conf
DOI
10.1109/LEOS.2001.968841
Filename
968841
Link To Document