DocumentCode
1963036
Title
Design, Performance, and Behavior of Pulsed and CW Silicon Double-Drift Impatts
Author
Snapp, Craig P. ; Pfund, George ; Podell, Allen F.
Author_Institution
Hawlett-Packard, 640 Page Mill Road, Palo Alto, CA 94304
fYear
1974
fDate
10-13 Sept. 1974
Firstpage
168
Lastpage
172
Abstract
Double-drift silicon IMPATTs for high power pulsed and CW applications have been optimized by the proper design of the width and impurity concentration in both the N and P-layers. Peak pulse powers greater than 18 watts at a 25% duty cycle were obtained at 10 GHz with the junction temperature rise limited to 200°C. For similar temperature rises CW powers of 3.4 watts at 11.5 GHz and 4.2 watts at 8.5 GHz were achieved. Conversion efficiencies were between 10.5 and 13.7%. Some detailed measurements of the large-signal conductance and FM noise of the CW devices are presented.
Keywords
Diodes; Epitaxial layers; Frequency; Impurities; Neodymium; Power generation; Pulse amplifiers; Silicon; Space vector pulse width modulation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1974. 4th European
Conference_Location
Montreux, Switzerland
Type
conf
DOI
10.1109/EUMA.1974.332034
Filename
4130675
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