Flower-structured InGaN/GaN quantum-well nanodisk crystals on micromachined Si pillars

Author

Ito, R. ; Hu, F.R. ; Ochi, K. ; Zhao, Y. ; Hane, K.

Author_Institution

Tohoku Univ., Sendai

fYear

2007

fDate

Aug. 12 2007-July 16 2007

Firstpage

183

Lastpage

184

Abstract

Periodic Si pillars were fabricated by Si-micromachining and unique flower-structured InGaN/GaN quantum-well nanodick crystals were deposited on the Si pillars. Split photoluminescence peak positions indicated stronger emission from the high In included quantum dots, as compared with the emission from the quantum-well matrix layers. Optical microscopy images indicate clear vertical and horizontal photoluminescence distributions of the flower structure on the pillared Si substrate.

Keywords

III-V semiconductors; gallium compounds; indium compounds; micromachining; nanostructured materials; optical microscopy; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; InGaN-GaN - Interface; Si; Si - Surface; Si pillars; flower-structured crystals; micromachining; optical microscopy; periodic pillars; photoluminescence; quantum dots; quantum-well nanodisk crystals; Crystal microstructure; Gallium nitride; Optical filters; Optical microscopy; Photoluminescence; Quantum dots; Quantum wells; Scanning electron microscopy; Substrates; Temperature; InGaN/GaN; Nanodisk; Photoluminescence; Quantum well;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMS and Nanophotonics, 2007 IEEE/LEOS International Conference on

Conference_Location

Hualien

Print_ISBN

978-1-4244-0641-8

Type

conf

DOI

10.1109/OMEMS.2007.4373901

Filename

4373901