Title :
Noise Measure of GaAs and InP Transferred Electron Amplifiers
Author :
Sitch, J.E. ; Robson, P.N.
Author_Institution :
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD. U.K.
Abstract :
The noise measures of both GaAs and InP transferred electron amplifiers are initially calculated analytically for the case of uniform electric field and free carrier concentration and are shown to have minimum values for nol products of about 1011 cm¿2. Noise measures for devices having realistic doping profiles are then computed by simulation and compared with the values predicted by the simple method. The best values of noise measure appear to be 7dB for GaAs and 4.5dB for InP when both diffusion and shot noise are taken into account.
Keywords :
Circuit noise; Doping profiles; Electrons; Frequency; Gallium arsenide; Indium phosphide; Noise figure; Noise measurement; Predictive models; Space charge;
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
DOI :
10.1109/EUMA.1974.332047
