• DocumentCode
    1963296
  • Title

    Noise Measure of GaAs and InP Transferred Electron Amplifiers

  • Author

    Sitch, J.E. ; Robson, P.N.

  • Author_Institution
    Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD. U.K.
  • fYear
    1974
  • fDate
    10-13 Sept. 1974
  • Firstpage
    232
  • Lastpage
    236
  • Abstract
    The noise measures of both GaAs and InP transferred electron amplifiers are initially calculated analytically for the case of uniform electric field and free carrier concentration and are shown to have minimum values for nol products of about 1011 cm¿2. Noise measures for devices having realistic doping profiles are then computed by simulation and compared with the values predicted by the simple method. The best values of noise measure appear to be 7dB for GaAs and 4.5dB for InP when both diffusion and shot noise are taken into account.
  • Keywords
    Circuit noise; Doping profiles; Electrons; Frequency; Gallium arsenide; Indium phosphide; Noise figure; Noise measurement; Predictive models; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1974. 4th European
  • Conference_Location
    Montreux, Switzerland
  • Type

    conf

  • DOI
    10.1109/EUMA.1974.332047
  • Filename
    4130688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1963296