DocumentCode
1963350
Title
A 0.1-mm2 3-channel area-optimized ΣΔ ADC in 0.16-µm CMOS with 20-kHz BW and 86-dB DR
Author
Sebastiano, Fabio ; van Veldhoven, R.H.M.
Author_Institution
NXP Semicond., Eindhoven, Netherlands
fYear
2013
fDate
16-20 Sept. 2013
Firstpage
375
Lastpage
378
Abstract
Front-ends for automotive sensors must digitize multiple channels with high resolution while minimizing their silicon area to save costs. Both channel latency and inter-channel gain mismatch must be minimized to be able to serve multiple sensor applications, ranging from ABS to power steering, with the same front-end. The proposed ΣΔ ADC simultaneously digitizes 3 channels, each with a DR of 86 dB over a 20-kHz BW using a 75-MHz clock. Channel latency is <;40 ns and inter-channel gain mismatch is <;0.2%. The ADC occupies only 0.1 mm2 in a 0.16-μm CMOS process. The small area is enabled by channel multiplexing, allowing component sharing among the channels, and by the large oversampling ratio (OSR), allowing for smaller capacitors.
Keywords
CMOS integrated circuits; analogue-digital conversion; automotive electronics; delta-sigma modulation; 3-channel area-optimized ΣΔ ADC; CMOS; automotive sensors; capacitors; channel latency; channel multiplexing; frequency 20 kHz; frequency 75 MHz; front-ends; inter-channel gain mismatch; oversampling ratio; size 0.16 mum; Capacitors; Crosstalk; Gain; Modulation; Multiplexing; Noise; Sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
ESSCIRC (ESSCIRC), 2013 Proceedings of the
Conference_Location
Bucharest
ISSN
1930-8833
Print_ISBN
978-1-4799-0643-7
Type
conf
DOI
10.1109/ESSCIRC.2013.6649151
Filename
6649151
Link To Document