Reliability of AlGaAs/GaAs heterojunction bipolar transistors: an overview

Author

Liou, J.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

1998

fDate

2-4 Mar 1998

Firstpage

14

Lastpage

21

Abstract

This paper provides an overview of issues related to the reliability of the increasingly popular and important AlGaAs/GaAs heterojunction bipolar transistor (HBT), which has been used widely in very-high speed applications such as cellular phones and microwave systems. Topics covered include: (1) typical HBT post-burn-in characteristics, (2) physical mechanisms contributing to the HBT long-term current gain drift, (3) models for predicting the HBT mean time to failure (MTTF), and (4) non-typical HBT post-burn-in behavior and its physical insight

Keywords

III-V semiconductors; UHF bipolar transistors; aluminium compounds; current distribution; failure analysis; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; reviews; semiconductor device models; semiconductor device reliability; temperature distribution; AlGaAs-GaAs; AlGaAs/GaAs HBT reliability; cellular phones; current distribution; heterojunction bipolar transistor; long-term current gain drift; mean time to failure; microwave systems; models; overview; physical mechanisms; post-burn-in characteristics; temperature distribution; very-high speed applications; Cellular phones; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit testing; Phased arrays; Predictive models; Radiative recombination; Temperature; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on

Conference_Location

Isla de Margarita

Print_ISBN

0-7803-4434-0

Type

conf

DOI

10.1109/ICCDCS.1998.705701

Filename

705701