Growth and characterization of bulk crystals, thin films and patterned structures of AlN, GaN and Al/sub x/Ga/sub 1-x/N on SiC(0001) substrates and device-related research

Author

Davis, R.F. ; Balkas, C.M. ; Bergman, L. ; Bremser, M.D. ; Nam, O.H. ; Perry, W.G. ; Shmagin, I. ; Sitar, Z. ; Ward, B.L. ; Zheleva, T. ; Kolbas, R. ; Nemanich, R.

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

9

Abstract

Summary form only given. Single crystals of AlN to 1 mm thickness were grown at 1950-2250/spl deg/C on 10/spl times/10 mm/sup 2/ 6H-SiC substrates via sublimation-re-condensation. Most crystals were 0.3 mm-1 mm thick transparent layers completely covering the substrates. Raman, optical and TEM results will be presented. Single crystals of GaN were grown by subliming powders of this material under NH/sub 3/. Raman and photoluminescence results will be shown.

Keywords

III-V semiconductors; Raman spectra; aluminium compounds; crystal growth from vapour; gallium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; vapour phase epitaxial growth; 1950 to 2250 C; Al/sub x/Ga/sub 1-x/N; AlGaN; AlN; GaN; Raman spectrum; SiC; SiC(0001) substrate; TEM; bulk single crystal; growth; patterned structure; photoluminescence; sublimation-re-condensation; thin film; transparent layer; Crystals; Gallium nitride; Lattices; Materials science and technology; Optical buffering; Optical films; Physics computing; Substrates; Thin film devices; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619237

Filename

619237