High-Q vertically-coupled microresonators built by wafer-bonding technique

Author

Djordjev, Kostadin ; Choi, Seung June ; Choi, Sang Jun ; Dapkus, P.Daniel

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

509

Abstract

Summary form only given. We demonstrate high Q vertically coupled passive microdisk resonators based on the InP material system as a first step towards utilizing active devices, and to understand the parameters limiting their performance. Vertical coupling is chosen because it exhibits two major advantages compared to the lateral geometry, namely: i) precise control of the coupling coefficient by epitaxial growth; ii) the material composition of the waveguides and resonator can be optimized and grown independently, which facilitates the design of active microdisk devices - ON/OFF switches, modulators and microdisk lasers

Keywords

III-V semiconductors; electro-optical modulation; electro-optical switches; indium compounds; laser cavity resonators; micro-optics; micromechanical resonators; optical fabrication; semiconductor lasers; wafer bonding; InP; InP material system; active devices; active microdisk devices; coupling coefficient; electro optical modulators; electro optical switches; epitaxial growth; high-Q vertically-coupled microresonators; lateral geometry; material composition; microdisk lasers; precise control; vertical coupling; vertically coupled passive microdisk resonators; wafer-bonding technique; Composite materials; Design optimization; Epitaxial growth; Geometrical optics; Indium phosphide; Microcavities; Optical control; Optical coupling; Optical design; Optical materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.968896

Filename

968896