DocumentCode :
1964236
Title :
Circuit Loss Characterisation with an IMPATT Diode
Author :
Tozer, R.C. ; Charlton, R. ; Hobson, G.S.
Author_Institution :
Department of Electronic & Electrical Engineering, University of Sheffield
fYear :
1974
fDate :
10-13 Sept. 1974
Firstpage :
464
Lastpage :
467
Abstract :
A convenient technique is described to measure the internal circuit loss, the load conductance and equivalent circuit susceptances of an IMPATT oscillator. The diode is biased just below its breakdown voltage and is used as a resonant reflection absorber. From these frequency dependent characteristics we are able to separate the load and internal circuit loss conductances providing that the circuit is singly resonant. The experimental technique does not require any mechanical disturbance of the diode in contrast to many network analyser techniques. It also allows a rapid and simple confirmation that the circuit is singly resonant.
Keywords :
Breakdown voltage; Displays; Equivalent circuits; Frequency; Loss measurement; RLC circuits; Reflection; Resonance; Semiconductor device measurement; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
Type :
conf
DOI :
10.1109/EUMA.1974.332094
Filename :
4130735
Link To Document :
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