• DocumentCode
    1964309
  • Title

    OMVPE Growth of AIGaIn/Gaxln1-xP Strained Quantum Well Structures and their Applications to Visible Laser Diodes

  • Author

    Katsuyama, T. ; Yoshida, I. ; Hashimoto, J. ; Taniguchi, Y. ; Hayashi, H.

  • Author_Institution
    Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd., Japan
  • fYear
    1992
  • fDate
    8-11 Jun 1992
  • Firstpage
    30
  • Lastpage
    31
  • Keywords
    Artificial intelligence; Capacitive sensors; Gallium arsenide; Photonic band gap; Quantum well devices; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
  • Print_ISBN
    0-87942-652-7
  • Type

    conf

  • DOI
    10.1109/MOVPE.1992.664920
  • Filename
    664920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1964309