مرکز منطقه ای اطلاع رساني علوم و فناوري - OMVPE Growth of AIGaIn/Ga<sub>x</sub>ln<sub>1-x</sub>P Strained Quantum Well Structures and their Applications to Visible Laser Diodes

DocumentCode :

1964309

Title :

OMVPE Growth of AIGaIn/Ga_xln_1-xP Strained Quantum Well Structures and their Applications to Visible Laser Diodes

Author :

Katsuyama, T. ; Yoshida, I. ; Hashimoto, J. ; Taniguchi, Y. ; Hayashi, H.

Author_Institution :

Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd., Japan

fYear :

1992

fDate :

8-11 Jun 1992

Firstpage :

Lastpage :

Keywords :

Artificial intelligence; Capacitive sensors; Gallium arsenide; Photonic band gap; Quantum well devices; Temperature dependence;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN :

0-87942-652-7

Type :

conf

DOI :

10.1109/MOVPE.1992.664920

Filename :

664920

Link To Document :