Broadband tunability of external-cavity semiconductor lasers for optical communication

Author

Su, Yi-Shin ; Lin, Ching-Fuh ; Wu, Bing-Ruey ; Laih, Lih-Wen ; Ho, Wen-Jang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

2

fYear

2001

fDate

2001

Firstpage

546

Abstract

This work reports the significant influence of the layout of nonidentical MQWs on the broadband tunability of external-cavity semiconductor lasers. Study shows that, using properly designed MQWs as the laser gain material, the external-cavity semiconductor laser exhibits an extremely broadband tuning range, covering from 1300 nm to 1540 nm. On the other hand, if opposite sequential layout of MQWs is used, tunability covers only from 1290 nm to 1450 nm

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser tuning; optical communication equipment; quantum well lasers; semiconductor optical amplifiers; waveguide lasers; 1300 to 1540 nm; In_0.53Ga_0.47As; In_0.67Ga_0.33As_0.72P_0.28; bent-stripe ridge-waveguide SOA; broadband tunability; external-cavity semiconductor lasers; multiple-quantum-well lasers; n-cladding layer; opposite sequential layout; optical communication; p-cladding layer; threshold current; wide barriers; Fiber lasers; Laser tuning; Lasers and electrooptics; Optical fiber communication; Optical fiber losses; Optical fibers; Optical tuning; Quantum well devices; Semiconductor lasers; Telecommunications;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.968931

Filename

968931