MOCVD growth, characterization and stability of high quality InGaN MQW structures

Summary form only given. High quality InGaN MQW structures (with In0.03Ga0.97N barriers and In0.18Ga0.82N wells) have been grown in which the FWHM of the room temperature PL spectrum is as low as 14 nm for a 10 period MQW structure. This paper will discuss the effects of growth rate, temperature and carrier gas (H2 vs. N2) on InGaN composition and quality. In addition to characterization by X-ray diffraction and photoluminescence we will demonstrate the usefulness of grazing incidence X-ray reflectivity (GIXR) as a new tool for the characterization of InGaN MQW structures. It will be shown that InGaN MQW structures with QW´s as thin as 20 /spl Aring/ can be grown with monolayer abupt interfaces. MQW samples grown with no H2 present during the InGaN growth will be compared to similar samples grown more conventionally, using H2 as the pick-up flow through the MO bubblers. The paper will also discuss the role of H2 and temperature in the stability of heterointerfaces when high temperature cap layers are grown on top of the MQW region.