Mechanism of electron capture and its effect on trapped holes at oxygen-deficient centers in buried oxide

Author

Karna, Shashi P. ; Pugh, R.D. ; Chavez, J.R. ; Shedd, W. ; Brothers, C.P. ; Singaraju, B.K.

Author_Institution

Res. Lab., Kirtland AFB, NM, USA

fYear

1998

fDate

5-8 Oct. 1998

Firstpage

95

Lastpage

96

Abstract

Summary form only given. Results from first-principles cluster approach quantum mechanical calculations on the electron capture mechanism by oxygen deficient center (ODC) hole traps (HTs) in SiO/sub 2/ are presented. These results suggest that upon electron capture, HTs at "unstrained" ODCs are permanently annealed out while those at highly strained ODCs form a weakly bonded electron-hole (e-h) complex which can readily emit an electron and switch back to a positive charge state. Anneal characteristics of trapped holes at ODCs in buried oxide (BOX) is an issue of fundamental importance for the reliability of silicon-on-insulator (SOI) devices.

Keywords

buried layers; cluster approximation; defect states; electron-hole recombination; hole traps; silicon-on-insulator; SOI device reliability; Si-SiO/sub 2/; SiO/sub 2/ ODC hole traps; anneal characteristics; buried oxide; cluster approach quantum mechanical calculations; electron capture; electron capture mechanism; electron emission; oxygen deficient center hole traps; oxygen-deficient centers; permanently annealed-out hole traps; positive charge state; silicon-on-insulator; strained ODCs; trapped holes; unstrained ODCs; weakly bonded electron-hole complex; Annealing; Bonding; Capacitive sensors; Charge carrier processes; Electron emission; Electron traps; Radioactive decay; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1998. Proceedings., 1998 IEEE International

Conference_Location

Stuart, FL, USA

ISSN

1078-621X

Print_ISBN

0-7803-4500-2

Type

conf

DOI

10.1109/SOI.1998.723128

Filename

723128