• DocumentCode
    1964720
  • Title

    A high gain 107 GHz amplifier in 130 nm CMOS

  • Author

    Momeni, Omeed ; Afshari, Ehsan

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2011
  • fDate
    19-21 Sept. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A systematic method to design high gain amplifiers at frequencies close to the fmax of the transistors is introduced. This approach finds the optimum termination conditions to reach the maximum achievable gain of the device. Using this technique in a standard 130 nm CMOS process, we design and implement a 107 GHz amplifier with a gain of 12.5 dB, PAE of 4.4%, and saturated output power of >;2.3 dBm, consuming 31 mW from a 0.95 V supply.
  • Keywords
    CMOS analogue integrated circuits; amplifiers; CMOS; frequency 107 GHz; high gain amplifiers; optimum termination conditions; power 31 mW; saturated output power; size 130 nm; voltage 0.95 V; CMOS integrated circuits; CMOS process; Gain; Inductors; Power generation; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2011 IEEE
  • Conference_Location
    San Jose, CA
  • ISSN
    0886-5930
  • Print_ISBN
    978-1-4577-0222-8
  • Type

    conf

  • DOI
    10.1109/CICC.2011.6055322
  • Filename
    6055322
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1964720