Title :
A high gain 107 GHz amplifier in 130 nm CMOS
Author :
Momeni, Omeed ; Afshari, Ehsan
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A systematic method to design high gain amplifiers at frequencies close to the fmax of the transistors is introduced. This approach finds the optimum termination conditions to reach the maximum achievable gain of the device. Using this technique in a standard 130 nm CMOS process, we design and implement a 107 GHz amplifier with a gain of 12.5 dB, PAE of 4.4%, and saturated output power of >;2.3 dBm, consuming 31 mW from a 0.95 V supply.
Keywords :
CMOS analogue integrated circuits; amplifiers; CMOS; frequency 107 GHz; high gain amplifiers; optimum termination conditions; power 31 mW; saturated output power; size 130 nm; voltage 0.95 V; CMOS integrated circuits; CMOS process; Gain; Inductors; Power generation; Transistors;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2011 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4577-0222-8
DOI :
10.1109/CICC.2011.6055322
