• DocumentCode
    1965180
  • Title

    Hot Electrons Microwave Power Monitors for X and S-Bands

  • Author

    Konopka, J.

  • Author_Institution
    Instysut Fizyki PAN, Al. Lotnikow 32/44, 02-668 warszawa, POLAND
  • fYear
    1975
  • fDate
    1-4 Sept. 1975
  • Firstpage
    89
  • Lastpage
    94
  • Abstract
    Design and performance of very high pulse power monitors based on the thermoelectric effects of hot carriers in a semiconductor placed in the microwave electric field gradient is described. Principle of operation of the devices is presented with the special attention paid to semiconductor material choice and some particular design problems. The results of measurements of S and X-band power monitors are given up to 1 MW and 100 KW respectively. Thermoelectric voltage of hot carriers is not sensitive to ambient temperature changes from - 40 to + 60°C. No aging effects during 6 month period were detected.
  • Keywords
    Charge carrier processes; Distribution functions; Electrons; Hot carriers; Lattices; Power measurement; Power system reliability; Probes; Semiconductor waveguides; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1975. 5th European
  • Conference_Location
    Hamburg, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1975.332159
  • Filename
    4130788
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1965180