Experimental and Theoretical Studies of Avalanche Transistors

A three terminal avalanche device is considered operating in a Trapatt type of circuit. A simplified theory is presented which suggests that good efficiencies over 30% can be obtained with bandwidths in excess of 50% and power gains around 10 dB. Experiments on a low frequency transistor show electronic gains of 16 dB caused by avalanche multiplication but `second breakdown´ limits the duration of any pulsed operation. Trapatt type waveforms are exhibited across the output though voltage swings are insufficient at present to give good efficiency.