DocumentCode :
1965282
Title :
MOVPE Growth of lnSb on GaAs Substrates
Author :
Graham, R.M. ; Mason, N.J. ; Walker, P.J. ; Gedridge, R.W., Jr.
Author_Institution :
Department of Physics, Clarendon Laboratory, Oxford
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
40
Lastpage :
40
Keywords :
Buffer layers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium; Laser transitions; Light scattering; Monitoring; Optical scattering; Resistance heating;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664925
Filename :
664925
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1965282
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