DocumentCode
1965282
Title
MOVPE Growth of lnSb on GaAs Substrates
Author
Graham, R.M. ; Mason, N.J. ; Walker, P.J. ; Gedridge, R.W., Jr.
Author_Institution
Department of Physics, Clarendon Laboratory, Oxford
fYear
1992
fDate
8-11 Jun 1992
Firstpage
40
Lastpage
40
Keywords
Buffer layers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium; Laser transitions; Light scattering; Monitoring; Optical scattering; Resistance heating;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664925
Filename
664925
Link To Document