• DocumentCode
    1965291
  • Title

    Semiconductor lasers with weak optical injection: a laser as a low-signal detector

  • Author

    Gabet, R. ; Bondiou, M. ; Stephan, G. ; Besnard, P.

  • Author_Institution
    Lab. d´Opt., ENSSAT, Lannion, France
  • fYear
    1999
  • fDate
    28-28 May 1999
  • Firstpage
    430
  • Abstract
    Summary form only given. The main idea of optical injection is to give a reference to the injected laser from another laser. The injected laser can become slaved onto the master and frequency-locking occurs following the injected intensity and the frequency difference between both lasers. Phase locking is a different phenomenon which manifests itself in the locking of the linewidth of the slaved laser onto that of the master. The topics of this communication is to describe the power spectral density of the injected laser when the injected power is decreased to very low level (/spl sim/picowatt) with a central frequency identical for both lasers but each of them having very different linewidths. The study follows from an interpretation of the laser as a filter and amplifier as recently given.
  • Keywords
    laser mode locking; photodetectors; semiconductor lasers; central frequency; frequency difference; frequency-locking; injected laser; injected power; linewidths; low-signal detector; master; optical injection; phase locking; power spectral density; semiconductor lasers; weak optical injection; Brightness temperature; Clouds; Frequency; Image resolution; Optical filters; Optical sensors; Power lasers; Remote sensing; Semiconductor lasers; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-595-1
  • Type

    conf

  • DOI
    10.1109/CLEO.1999.839655
  • Filename
    839655