DocumentCode :
1965291
Title :
Semiconductor lasers with weak optical injection: a laser as a low-signal detector
Author :
Gabet, R. ; Bondiou, M. ; Stephan, G. ; Besnard, P.
Author_Institution :
Lab. d´Opt., ENSSAT, Lannion, France
fYear :
1999
fDate :
28-28 May 1999
Firstpage :
430
Abstract :
Summary form only given. The main idea of optical injection is to give a reference to the injected laser from another laser. The injected laser can become slaved onto the master and frequency-locking occurs following the injected intensity and the frequency difference between both lasers. Phase locking is a different phenomenon which manifests itself in the locking of the linewidth of the slaved laser onto that of the master. The topics of this communication is to describe the power spectral density of the injected laser when the injected power is decreased to very low level (/spl sim/picowatt) with a central frequency identical for both lasers but each of them having very different linewidths. The study follows from an interpretation of the laser as a filter and amplifier as recently given.
Keywords :
laser mode locking; photodetectors; semiconductor lasers; central frequency; frequency difference; frequency-locking; injected laser; injected power; linewidths; low-signal detector; master; optical injection; phase locking; power spectral density; semiconductor lasers; weak optical injection; Brightness temperature; Clouds; Frequency; Image resolution; Optical filters; Optical sensors; Power lasers; Remote sensing; Semiconductor lasers; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
Type :
conf
DOI :
10.1109/CLEO.1999.839655
Filename :
839655
Link To Document :
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