A Non Linear Electrothermal Model of AlGaN/GaN HEMT for Switch Applications

Author

Charbonniaud, C. ; Xiong, A. ; Dellier, S. ; Gasseling, T.

Author_Institution

AMCAD Eng., Limoges, France

fYear

2012

fDate

14-17 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

This paper aims to depict a non linear and electrothermal model of AlGaN/GaN HEMT devices. This model was especially developed in order to operate in switch mode but it can also be used for amplifiers design. For this purpose, a particular attention has been brought on the formulation of the current source and the junction capacitances in order to extend the model validity all over the full I(V) characteristics (positive and negative drain voltage excursion). Compared to classical models dedicated to amplifier designs, this model is able to describe third quadrant (when driving the transistor with negative drain voltages) and zero drain voltage bias phenomena.

Keywords

III-V semiconductors; aluminium compounds; amplifiers; gallium compounds; high electron mobility transistors; semiconductor device models; switches; wide band gap semiconductors; HEMT devices; amplifier design; classical model; current source; junction capacitances; model validity; nonlinear electrothermal model; positive-negative drain voltage excursion; switch applications; switch mode; zero drain voltage bias phenomena; Capacitance; Gallium nitride; HEMTs; Integrated circuit modeling; Pulse measurements; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Conference_Location

La Jolla, CA

ISSN

1550-8781

Print_ISBN

978-1-4673-0928-8

Type

conf

DOI

10.1109/CSICS.2012.6340073

Filename

6340073