• DocumentCode
    1965394
  • Title

    A Planar Switchable Capacitor with Embedded Two-Dimensional Electron System for Higher Integrations in VLSI and RFIC

  • Author

    Dianat, Pouya ; Prusak, R.W. ; Quaranta, Fabio ; Cola, Adriano ; Nabet, Bahram

  • Author_Institution
    Electr. & Comput. Eng. Dept., Drexel Univ., Philadelphia, PA, USA
  • fYear
    2012
  • fDate
    14-17 Oct. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A metal-semiconductor-metal capacitor with embedded two-dimensional charge is designed and fabricated. Capacitance-Voltage characteristics exhibit switchability with a large voltage sensitivity. Maximum and minimum capacitances outperform previous predictions with potential applicability in RFICs and VLSI for reducing the cross-talk among transmission lines and achievement of higher integrations. The device can replace bulky conductors with its negative capacitance feature. The large light sensitivity in the C-V makes this capacitor an ideal candidate for monolithic microwave-photonic integrated circuits.
  • Keywords
    VLSI; capacitors; crosstalk; metal-semiconductor-metal structures; radiofrequency integrated circuits; two-dimensional electron gas; RFIC; VLSI; bulky conductors; capacitance-voltage characteristics; cross-talk reduction; embedded two-dimensional charge; embedded two-dimensional electron system; light sensitivity; metal-semiconductor-metal capacitor; monolithic microwave-photonic integrated circuits; negative capacitance feature; planar switchable capacitor; transmission lines; voltage sensitivity; Capacitance; Capacitance-voltage characteristics; Capacitors; Cathodes; Frequency measurement; HEMTs; MODFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
  • Conference_Location
    La Jolla, CA
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4673-0928-8
  • Type

    conf

  • DOI
    10.1109/CSICS.2012.6340074
  • Filename
    6340074