DocumentCode
1965394
Title
A Planar Switchable Capacitor with Embedded Two-Dimensional Electron System for Higher Integrations in VLSI and RFIC
Author
Dianat, Pouya ; Prusak, R.W. ; Quaranta, Fabio ; Cola, Adriano ; Nabet, Bahram
Author_Institution
Electr. & Comput. Eng. Dept., Drexel Univ., Philadelphia, PA, USA
fYear
2012
fDate
14-17 Oct. 2012
Firstpage
1
Lastpage
4
Abstract
A metal-semiconductor-metal capacitor with embedded two-dimensional charge is designed and fabricated. Capacitance-Voltage characteristics exhibit switchability with a large voltage sensitivity. Maximum and minimum capacitances outperform previous predictions with potential applicability in RFICs and VLSI for reducing the cross-talk among transmission lines and achievement of higher integrations. The device can replace bulky conductors with its negative capacitance feature. The large light sensitivity in the C-V makes this capacitor an ideal candidate for monolithic microwave-photonic integrated circuits.
Keywords
VLSI; capacitors; crosstalk; metal-semiconductor-metal structures; radiofrequency integrated circuits; two-dimensional electron gas; RFIC; VLSI; bulky conductors; capacitance-voltage characteristics; cross-talk reduction; embedded two-dimensional charge; embedded two-dimensional electron system; light sensitivity; metal-semiconductor-metal capacitor; monolithic microwave-photonic integrated circuits; negative capacitance feature; planar switchable capacitor; transmission lines; voltage sensitivity; Capacitance; Capacitance-voltage characteristics; Capacitors; Cathodes; Frequency measurement; HEMTs; MODFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location
La Jolla, CA
ISSN
1550-8781
Print_ISBN
978-1-4673-0928-8
Type
conf
DOI
10.1109/CSICS.2012.6340074
Filename
6340074
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