Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

Author

Chevalier, P. ; Lacave, T. ; Canderle, E. ; Pottrain, A. ; Carminati, Y. ; Rosa, J. ; Pourchon, F. ; Derrier, N. ; Avenier, G. ; Montagne, A. ; Balteanu, A. ; Dacquay, E. ; Sarkas, I. ; Celi, D. ; Gloria, D. ; Gaquiere, Christopher ; Voinigescu, S.P. ; Ch

Author_Institution

STMicroelectron., Crolles, France

fYear

2012

fDate

14-17 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

This paper summarizes the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz. The noise and power performance in the W-band of different SiGe HBT generations are compared along with CML ring oscillators and circuit results up to the D band.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; field effect MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; submillimetre wave transistors; BiCMOS technology; CML ring oscillators; D band; HBT generations; STMicroelectronics; SiGe; W-band; noise performance; power performance; BiCMOS integrated circuits; Frequency measurement; Heterojunction bipolar transistors; Noise measurement; Ring oscillators; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Conference_Location

La Jolla, CA

ISSN

1550-8781

Print_ISBN

978-1-4673-0928-8

Type

conf

DOI

10.1109/CSICS.2012.6340083

Filename

6340083